| Autor: |
Wei-jen Hsia, Wilbur G. Catabay, M. Lu, Dung-Ching Perng |
| Rok vydání: |
2002 |
| Předmět: |
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| Zdroj: |
Proceedings of ISSM2000. Ninth International Symposium on Semiconductor Manufacturing (IEEE Cat. No.00CH37130). |
| DOI: |
10.1109/issm.2000.993698 |
| Popis: |
In the development of interconnect architecture for future technologies, LSI has determined that adoption of low-k dielectrics will give higher performance gain as opposed to the replacement of aluminum with copper. The goal is to integrate a robust low-k material for LSI's 0.18 /spl mu/m subtractive aluminum technology with at least 20% capacitance reduction. As a result we have successfully integrated and qualified a flowable carbon doped low-k-film. Dielectric constant ranges from 2.8 to 3.5. We have achieved comparable via resistance performance and 20% to 35% reductions in the line-to-line capacitance compared to the conventional HDP scheme. Greater than 90% system uptime was obtained during the marathon. The process has been released to manufacturing with statistical process control monitoring for the past few months. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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