Directed self-assembly of block copolymers for 7 nanometre FinFET technology and beyond
| Autor: | Hsinyu Tsai, Chi-Chun Liu, Kafai Lai, Chen Zhang, Daniel Corliss, Richard A. Farrell, Nelson Felix, Chun Wing Yeung, Ruilong Xie, Yann Mignot, Elliott Franke, Cheng Chi, Jingyun Zhang |
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| Rok vydání: | 2018 |
| Předmět: |
Fabrication
Computer science business.industry Transistor Process (computing) Nanotechnology 02 engineering and technology Integrated circuit 021001 nanoscience & nanotechnology 01 natural sciences Electronic Optical and Magnetic Materials law.invention 010309 optics law 0103 physical sciences Microelectronics Nanometre Node (circuits) Electrical and Electronic Engineering Photolithography 0210 nano-technology business Instrumentation |
| Zdroj: | Nature Electronics. 1:562-569 |
| ISSN: | 2520-1131 |
| Popis: | The drive to deliver increasingly powerful and feature-rich integrated circuits has made technology node scaling—the process of reducing transistor dimensions and increasing their density in microchips—a key challenge in the microelectronics industry. Historically, advances in optical lithography patterning have played a central role in allowing this trend to continue. Directed self-assembly of block copolymers is a promising alternative patterning technique that offers sub-lithographic resolution and reduced process complexity. However, the feasibility of applying this approach to the fabrication of critical device layers in future technology nodes has never been verified. Here we compare the use of directed self-assembly and conventional patterning methods in the fabrication of 7 nanometre node FinFETs, using an industrially relevant and high-volume manufacturing-compliant test vehicle. Electrical validation shows comparable device performance, suggesting that directed self-assembly could offer a simplified patterning technique for future semiconductor technology. A comparison between the use of directed self-assembly and conventional patterning methods in the fabrication of 7 nm node FinFETs shows similar device performance, suggesting directed self-assembly could offer a simplified patterning technique for future semiconductor technology nodes. |
| Databáze: | OpenAIRE |
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