Reliability and performance of a true enhancement mode HIGFET for wireless applications
| Autor: | Elizabeth C. Glass, Robert Martin, Craig A. Gaw, T. Arnold |
|---|---|
| Rok vydání: | 2007 |
| Předmět: |
Engineering
business.industry Amplifier Electrical engineering Volume (computing) Condensed Matter Physics Atomic and Molecular Physics and Optics Die (integrated circuit) Surfaces Coatings and Films Electronic Optical and Magnetic Materials Power (physics) System requirements Reliability (semiconductor) Mask set Electronic engineering Wireless Electrical and Electronic Engineering Safety Risk Reliability and Quality business |
| Zdroj: | Microelectronics Reliability. 47:1180-1187 |
| ISSN: | 0026-2714 |
| DOI: | 10.1016/j.microrel.2007.02.006 |
| Popis: | Freescale’s true enhancement mode (EMODE) HIGFET is a high performance single supply technology used for wireless power amplifiers. It is the first technology of its kind to be produced in a high volume manufacturing environment. The EMODE HIGFET intrinsic reliability was evaluated using a conventional three temperature DC accelerated stress test. The device used for these tests has a total gate width of 0.6 mm, a gate length of 0.8 μm, and a die thickness of 3 mils. The device has no through-wafer vias, is representative of the unit cell for larger devices, and was processed using a production mask set. For targeted applications with a system life of 5 years, the first expected failure at 150 °C for the 1 ppm level was determined to be 82 years at a 90% lower confidence level, which exceeds the reliability requirements for subscriber unit power amplifiers by a wide margin. This work demonstrates that EMODE HIGFET devices are high performance RF devices with intrinsic reliability well in excess of anticipated system requirements. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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