Optical characterization of Al0.5Ga0.5As1−xSbxbuffer layers with modulation doped AlInAs/InGaAs structures

Autor:	Stefan P. Svensson, Parvez N. Uppal, David M. Gill
Rok vydání:	1997
Předmět:	Materials science Photoluminescence business.industry Band gap Bowing Doping General Physics and Astronomy Material system Buffer (optical fiber) Gallium arsenide chemistry.chemical_compound chemistry Optoelectronics business Molecular beam epitaxy
Zdroj:	Journal of Applied Physics. 81:1422-1426
ISSN:	1089-7550 0021-8979
DOI:	10.1063/1.363880
Popis:	We present results of photoluminescence studies of Al0.5Ga0.5As1−xSbx grown by molecular beam epitaxy on GaAs substrates. We compared the photoluminescence (PL) peak position as a function of composition with the band gap prediction using the established formalism developed for other quaternaries. We found a discrepancy of up to 0.2 eV indicating that an extra bowing factor needs to be included in the band gap composition equation for this material system. InGaAs/AlInAs structures grown on top of the Al0.5Ga0.5As1−xSbx were also characterized and compared with similar structures grown on InP and were shown to exhibit similar PL intensities and Hall mobilities, indicating that the quaternary buffer layer can be used for growth of high-In concentration InGaAs device structures on GaAs.
Databáze:	OpenAIRE
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