Chemical beam epitaxy of high purity InP using tertiarybutylphosphine and 1,2 bis-phosphinoethane
| Autor: | G. Hincelin, M. Zahzouh, R. Mellet, A.M. Pougnet |
|---|---|
| Rok vydání: | 1993 |
| Předmět: |
Morphology (linguistics)
Materials science Stereochemistry Mechanical Engineering Dimer Phosphorus Thermal decomposition Analytical chemistry chemistry.chemical_element Condensed Matter Physics Chemical beam epitaxy Flux ratio chemistry.chemical_compound chemistry Tetramer Mechanics of Materials Molecule General Materials Science |
| Zdroj: | Materials Science and Engineering: B. 21:165-168 |
| ISSN: | 0921-5107 |
| DOI: | 10.1016/0921-5107(93)90340-s |
| Popis: | This paper compares tertiarybutylphosphine (TBP), and 1,2 bis-phosphinoethane (BPE) as phosphorus precursors for the growth of InP in chemical beam epitaxy. The thermal decomposition of both sources in a low pressure cracking cell produces dimer P2 and tetramer P4 species. The P2 to P4 ratio is a function of the cracker temperature θ c , the dimer P2 is the dominant species for θ c = 800 ° C . High quality InP layers, showing good surface morphology, were grown using low values of the V to III flux ratio R V/III , leading to a very low consumption of the group V product. The lower R V/III value ( R V/III ⋍ 3 ) is obtained with the BPE molecule, which contains two phosphorus atoms. 77 K Hall mobility values of 62 500 cm2/Vs and 26 500 cm2/Vs were obtained using TBP and BPE respectively and triethylindium as group III source. With both phosphorus sources, background carrier density levels as low as N D − N A 15 cm −3 are obtained. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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