TEMAZ/O3 atomic layer deposition process with doubled growth rate and optimized interface properties in metal–insulator–metal capacitors
| Autor: | Susanne Ohsiek, Bernhard Trui, Tina Tauchnitz, Maximilian Drescher, Mahdi Shirazi, Wenke Weinreich, Simon D. Elliott, Jonas Sundqvist, Stefan Riedel, Konrad Seidel, P. Polakowski, Elke Erben |
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| Rok vydání: | 2013 |
| Předmět: |
Materials science
business.industry chemistry.chemical_element Nanotechnology Surfaces and Interfaces Dielectric Condensed Matter Physics Surfaces Coatings and Films law.invention Atomic layer deposition Capacitor chemistry law Electrode Deposition (phase transition) Optoelectronics Thin film Material properties business Tin |
| Zdroj: | Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 31:01A123 |
| ISSN: | 1520-8559 0734-2101 |
| Popis: | ZrO2 is of very high interest for various applications in semiconductor industry especially as high-k dielectric in metal–insulator–metal (MIM) capacitor devices. Further improvement of deposition processes, of material properties, and of integration schemes is essential in order to meet the strict requirements of future devices. In this paper, the authors describe a solution to solve one of the key challenges by reducing the process time of the bottle neck high-k atomic layer deposition (ALD). The authors extensively optimized the most common ALD process used for the ZrO2 deposition (TEMAZ/O3) resulting now in a doubled growth rate compared to the published growth rates of maximum 1 A/cycle. Chemical reactions explaining the origin of the high growth rate are proposed by theoretical process modelling. At the same time, the outstanding electrical properties of ZrO2 thin films could be preserved. Finally, the integration of the ZrO2 process in MIM capacitor devices with TiN electrodes was evaluated. Thereby, the known effect of TiN bottom electrode oxidation by the O3 process was analyzed and significantly reduced by different integration approaches including wet chemical treatments and ALD process variations. The resulting MIM capacitors show low leakage current and high polarity symmetry. |
| Databáze: | OpenAIRE |
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