Convection and segregation during growth of Ge and InSb crystals by the submerged heater method
| Autor: | Georg Müller, S. Scharl, H.-J. Sell, Aleksandar G. Ostrogorsky |
|---|---|
| Rok vydání: | 1993 |
| Předmět: |
chemistry.chemical_classification
Convection Condensed matter physics Dopant Doping chemistry.chemical_element Mineralogy Crystal growth Germanium Condensed Matter Physics Inorganic Chemistry Condensed Matter::Materials Science chemistry Condensed Matter::Superconductivity Materials Chemistry Tellurium Single crystal Inorganic compound |
| Zdroj: | Journal of Crystal Growth. 128:201-206 |
| ISSN: | 0022-0248 |
| Popis: | The submerged heater method was used to grow doped InSb and Ge crystals. The axial distribution of the dopants was found to be similar to space grown crystals. The ideal, diffusion-controlled steady-state segregation of Te-doped InSb was achieved for the first time in the terrestrial environment. One Sb-doped Ge single crystal was grown under steady-state conditions using a zone-leveling procedure. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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