Surface chemistry of HF passivated silicon: X‐ray photoelectron and ion scattering spectroscopy results

Autor:	H. A. Krasinski, G. G. Peterson, B. R. Weinberger, T. C. Eschrich
Rok vydání:	1986
Předmět:	X-ray photoelectron spectroscopy Passivation Silicon Chemistry Scattering Monolayer technology industry and agriculture Analytical chemistry General Physics and Astronomy chemistry.chemical_element Wafer Spectroscopy Ion
Zdroj:	Journal of Applied Physics. 60:3232-3234
ISSN:	1089-7550 0021-8979
DOI:	10.1063/1.337743
Popis:	X‐ray photoelectron spectroscopy and ion scattering spectroscopy studies of HF‐treated silicon surfaces are described in an effort to understand the chemical termination leading to the near ideal electrical passivation of such surfaces. Results suggest a fluorine surface density of order a monolayer chemically bonded to silicon with a partial oxygen contamination due to exposure of the HF‐treated wafer to air, and a physisorbed hydrocarbon layer on top.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::0e5a7d575ebc44a0afebaa220c76deaf https://doi.org/10.1063/1.337743 Zobrazit plný text záznamu