Interfacial sharpnesses and thicknesses of layers in a GaAs0.2P0.8/GaP strained‐layer superlattice measured by Auger sputter profiling
| Autor: | M. B. Chamberlain, W. O. Wallace |
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| Rok vydání: | 1985 |
| Předmět: | |
| Zdroj: | Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 3:2596-2599 |
| ISSN: | 1520-8559 0734-2101 |
| DOI: | 10.1116/1.572841 |
| Popis: | The interfacial sharpnesses and thicknesses of the layers in a strained‐layer superlattice were measured using Auger sputter profiling. The 950‐nm‐thick SLS laminate was fabricated by organometallic chemical vapor deposition and it consisted of 24 alternating layers of GaAs0.2P0.8 and GaP. The Auger sputter profile through these layers measured the intensity of the P LMM Auger emission plotted as a function of time sputtering through the layers with a 700‐eV Ar‐ion beam. The average layer thickness measured was 39.6 nm with a standard deviation of 1.1 nm. The measured depth resolution was 0.7% at a sputtered depth of 950 nm, which is as good as the best values of 1%–10% reported at this depth in profiles of amorphous specimens. The superb depth resolution measured here is attributed to the following characteristics of the SLS material: a very low surface roughness; a uniform crystal structure throughout the SLS laminate even though the lattice constant changes between adjacent layers; a very pure material... |
| Databáze: | OpenAIRE |
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