Electrical and optical properties of lodine doped CdZnTe layers grown by metalorganic vapor phase epitaxy
| Autor: | T. Nimura, Kazuhito Yasuda, F. Inukai, K. Kojima, K. Mori, Y. Kubota, Y. Asai |
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| Rok vydání: | 1998 |
| Předmět: |
Photoluminescence
Materials science business.industry Exciton Doping Conductivity Condensed Matter Physics Epitaxy Cadmium telluride photovoltaics Electronic Optical and Magnetic Materials Excited state Materials Chemistry Optoelectronics Emission spectrum Electrical and Electronic Engineering business |
| Zdroj: | Journal of Electronic Materials. 27:527-531 |
| ISSN: | 1543-186X 0361-5235 |
| DOI: | 10.1007/s11664-998-0009-3 |
| Popis: | Electrical and photoluminescence properties of iodine doped CdZnTe (CZT) layers grown by metalorganic vapor phase epitaxy have been studied. Doped layers showed an n-type conductivity from the Zn composition x=0 (CdTe) to 0.07. Above x=0.07, resistivities of doped layers increased steeply up to 106 Ω-cm. Resistivities of doped CZT layers were higher than those of undoped layers above x=0.6. Photoluminescence intensity of doped layers increased compared to undoped layers. Doped CdTe and ZnTe layers showed neutral donor bound exciton emission lines at the exciton related region. Also, these layers showed an increase in emission intensity at the donor acceptor pair recombination bands. Sharp emission lines were observed in doped CZT layers at around 1.49 eV. These emission lines were considered to be originated from GaAs substrates which were optically excited by the intense emission from doped CZT layers. |
| Databáze: | OpenAIRE |
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