Experimental assessment of metal solvents for low-temperature liquid-phase epitaxy of silicon carbide
| Autor: | Michael G. Mauk, Archana Sharma, Robert G. Hunsperger, Bryan W. Feyock |
|---|---|
| Rok vydání: | 2001 |
| Předmět: |
Supersaturation
Materials science Stereochemistry Liquid phase Crystal growth Condensed Matter Physics Epitaxy Inorganic Chemistry Metal chemistry.chemical_compound Chemical engineering Solvent evaporation chemistry visual_art Materials Chemistry visual_art.visual_art_medium Silicon carbide Solvent effects |
| Zdroj: | Journal of Crystal Growth. 225:322-329 |
| ISSN: | 0022-0248 |
| DOI: | 10.1016/s0022-0248(01)00887-9 |
| Popis: | The results of an experimental survey of metal solvents for low-temperature liquid-phase epitaxy (LPE) of SiC on 6H–SiC substrates is reported. The most promising solvents for low-temperature (900°C–1200°C) LPE include Ga, Sn, Ga/Sn, Ni, Cu, and Zn–Al. We were able to achieve continuous epitaxial layers of several microns thickness at growth temperatures of around 1000°C. In the case of Zn/Al solvents, the growth mechanism is attributed to supersaturation induced by solvent evaporation. Selective epitaxy on patterned, masked SiC substrates was also demonstrated. |
| Databáze: | OpenAIRE |
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