Optical and electron beam studies of gamma-irradiated AlGaN/GaN high-electron-mobility transistors

Autor:	Jasques Boivin, Sebestian Guay, Sergey Khodorov, Leonid Chernyak, Anupama Yadav, Boris Meyler, Cameron Glasscock, Elena Flitsiyan, Joseph Salzman, Carlo Coppola, Igor Lubomirsky
Rok vydání:	2016
Předmět:	010302 applied physics Nuclear and High Energy Physics Radiation Photon Materials science business.industry Carrier scattering Cathodoluminescence 02 engineering and technology Activation energy Electron 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences 0103 physical sciences Cathode ray Electron beam processing Optoelectronics General Materials Science Irradiation 0210 nano-technology business
Zdroj:	Radiation Effects and Defects in Solids. 171:223-230
ISSN:	1029-4953 1042-0150
Popis:	The impact of 60Co gamma-irradiation on n-channel AlGaN/GaN high-electron-mobility transistors was studied by means of temperature-dependent electron beam-induced current (EBIC) and cathodoluminescence (CL) techniques. For the doses up to ∼250 Gy, an enhancement of minority carrier transport was observed as evident from the EBIC measurements. This enhancement is associated with internal electron irradiation induced by the primary gamma photons. For the doses above ∼250 Gy, deterioration in minority carrier transport was explained by carrier scattering on radiation-induced defects. It is shown that calculated activation energy from the EBIC and CL measurements follows exactly the same trend, which implies that the same underlying phenomenon is responsible for observed findings.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::0e3fc2ed4d55c294c3264e5ac9735014 https://doi.org/10.1080/10420150.2016.1170018 Zobrazit plný text záznamu Plný text ve formátu PDF Plný text ve formátu HTML
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