Synthesis of very long ErSi2 nanowires on Si substrates

Autor:	S. Komuro, Susumu Harako, Xinwei Zhao, K. Kouno, A. Ohata
Rok vydání:	2005
Předmět:	Diffraction Materials science Thin layers business.industry Hexagonal crystal system Annealing (metallurgy) Nanowire Nanotechnology Condensed Matter Physics Laser law.invention Amorphous solid Inorganic Chemistry Large aspect ratio law Materials Chemistry Optoelectronics business
Zdroj:	Journal of Crystal Growth. 275:e2263-e2267
ISSN:	0022-0248
DOI:	10.1016/j.jcrysgro.2004.11.362
Popis:	ErSi 2 nanowires with a length of several micrometers have been fabricated on Si substrates. The starting samples were highly Er-doped amorphous Si thin layers formed by laser ablating an Si:Er 2 O 3 mixture target. After post-annealing in vacuum, the nanowires were formed on the Si(0 0 1) surfaces along 〈 1 1 0 〉 directions. The average length and width of the wires depended on the annealing temperature and time. The height of the wires, in contrast, remained equal to be 0.6 nm. The longest wire achieved here was 20 μm. A large aspect ratio of 500 was obtained. X-ray diffraction and TEM observation indicated the hexagonal ErSi 2 formation. Our results provide a way to synthesize Si-based nanowires having enough length for further device applications without an UHV system.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::0e3d20dcf6592b0e79bc41bc7c768a05 https://doi.org/10.1016/j.jcrysgro.2004.11.362 Zobrazit plný text záznamu Full Text from ScienceDirect