Analysis on the off-state design and characterization of LIGBTs in partial SOI technology
| Autor: | Liang Yew Ng, Elizabeth Kho Ching Tee, Alexander Hoelke, Florin Udrea, S. Pilkington, Marina Antoniou, Wan Azlan bin Wan Zainal Abidin, Deb Kumar Pal |
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| Rok vydání: | 2014 |
| Předmět: |
Materials science
business.industry Electrical engineering Silicon on insulator High voltage Insulated-gate bipolar transistor Condensed Matter Physics Buried oxide Electronic Optical and Magnetic Materials Coupling effect Materials Chemistry Optoelectronics Electrical and Electronic Engineering business Leakage (electronics) |
| Zdroj: | Solid-State Electronics. 96:38-43 |
| ISSN: | 0038-1101 |
| DOI: | 10.1016/j.sse.2014.04.018 |
| Popis: | Classical high voltage devices fabricated on SOI substrates suffer from a backside coupling effect which could result in premature breakdown. This phenomenon becomes more prominent if the structure is an IGBT which features a p-type injector. To suppress the premature breakdown due to crowding of electro-potential lines within a confined SOI/buried oxide structure, the partial SOI (PSOI) technique is being introduced. This paper analyzes the off-state behavior of an n-type Superjunction (SJ) LIGBT fabricated on PSOI substrate. During the initial development stage the SJ LIGBT was found to have very high leakage. This was attributed to the back and side coupling effects. This paper discusses these effects and shows how this problem could be successfully addressed with minimal modifications of device layout. The off-state performance of the SJ LIGBT at different temperatures is assessed and a comparison to an equivalent LDMOSFET is given. |
| Databáze: | OpenAIRE |
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