Charging of Ion-Implanted Dielectrics by Electron Irradiation

Autor:	E. I. Rau, E. Yu. Zykova, A. A. Tatarintsev, S. V. Zaitsev
Rok vydání:	2019
Předmět:	010302 applied physics Materials science Physics and Astronomy (miscellaneous) Physics::Instrumentation and Detectors Metal ions in aqueous solution Kinetics Analytical chemistry Physics::Optics Dielectric 01 natural sciences 010305 fluids & plasmas Ion Ionizing radiation Condensed Matter::Materials Science Physics::Plasma Physics 0103 physical sciences Electron beam processing Irradiation Inert gas
Zdroj:	Technical Physics. 64:1205-1209
ISSN:	1090-6525 1063-7842
DOI:	10.1134/s1063784219080188
Popis:	The charging kinetics of Al2O3 (sapphire) and SiO2 (α-quartz) dielectrics irradiated by inert gas ions (Ar+), metal ions (Ga+), and protons (H+) has been studied. It has been found that charging kinetics depends considerably on the type of irradiating ion. Also, it has been established that preirradiation of a dielectric target by an ionizing corpuscular radiation (protons, ions) substantially changes the charge characteristics of the dielectric surface. These differences depend on irradiating ion energy, which governs the depth of an accumulated negative charge layer versus the depth of ion preimplantation.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::0e241cc8b9eb3db6024bb80770a31834 https://doi.org/10.1134/s1063784219080188 Zobrazit plný text záznamu Plný text ve formátu PDF Plný text ve formátu HTML
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