| Autor: |
Jean Decobert, A. Paraskevopoulos, Christophe Kazmierski, F. Alexandre, S. Gouraud, Fabrice Blache, D. Franke, M.-C. Cuisin |
| Rok vydání: |
2005 |
| Předmět: |
|
| Zdroj: |
International Conference on Indium Phosphide and Related Materials, 2005.. |
| DOI: |
10.1109/iciprm.2005.1517425 |
| Popis: |
Buried heterostructure (BH) electroabsorption (EA) modulators completely grown by LP-MOVPE present advantages of robust single mode and better thermal behavior over standard ridge structures. However, without special care, strong morphological difficulties after MOVPE regrowth and high leakage current with excess junction capacitance are often observed forbidding early technological steps in the fabrication process or the realization of reliable components. To this aim, Fe-doped InP grown by TBCl assisted LP-MOVPE has been studied and applied to bury AlGaInAs MQW based EAM. Successful regrowth interface treatments as well excellent regrowth morphologies were routinely accomplished and 40 Gbit/s SIBH-EAM were fabricated and evaluated. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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