Characterization and simulation analysis of laser-induced crystallization of amorphous silicon thin films
| Autor: | Zechun Cao, Weiguang Yang, Lu Huang, Weimin Shi, Qihong Lou, Jing Jin, Linjun Wang, Zhijun Yuan, Jun Zhou |
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| Rok vydání: | 2013 |
| Předmět: |
Amorphous silicon
Materials science Mechanical Engineering Analytical chemistry Nanocrystalline silicon Physics::Optics Condensed Matter Physics Laser Amorphous solid law.invention symbols.namesake Crystallography chemistry.chemical_compound Optical microscope chemistry Mechanics of Materials law Condensed Matter::Superconductivity symbols General Materials Science Crystallization Thin film Raman spectroscopy |
| Zdroj: | Materials Science in Semiconductor Processing. 16:1982-1987 |
| ISSN: | 1369-8001 |
| DOI: | 10.1016/j.mssp.2013.07.005 |
| Popis: | The effect of laser energy density on the crystallization of hydrogenated amorphous silicon (a-Si:H) thin films was studied theoretically and experimentally. The thin films were irritated with a frequency-doubled (λ=532 nm) Nd:YAG pulsed nanosecond laser. An effective finite element model was built to predict the melting threshold and the optimized laser energy density for crystallization of intrinsic amorphous silicon. Simulation analysis revealed variations in the temperature distribution with time and melting depth. The highest crystalline fraction measured by Raman spectroscopy (84.5%) agrees well with the optimized laser energy density (1000 mJ/cm2) in the transient-state simulation. The surface morphology of the thin films observed by optical microscopy is in fairly good agreement with the temperature distribution in the steady-state simulation. |
| Databáze: | OpenAIRE |
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