Nanocrystal physical attributes influencing non-volatile memory performance

Autor:	Jane A. Yater, K.M. Chang, Rajesh A. Rao, Michael A. Sadd, B. Acred, J. Peschke, Craig T. Swift, Bruce E. White, B. Hradsky, S.G.H. Anderson, Ramachandran Muralidhar, S. Straub, Erwin J. Prinz, B. Steimle
Rok vydání:	2005
Předmět:	Non-volatile memory Number density Materials science Nanocrystal Electronic engineering Data retention Biological system Design for manufacturability
Zdroj:	63rd Device Research Conference Digest, 2005. DRC '05..
DOI:	10.1109/drc.2005.1553044
Popis:	Theimpact ofnanocrystal [NC]number density, size and areal coverage ontheprogram-erase characteristics, data retention anddisturbs ofnanocrystal memorydevices is investigated. Itisshownthat thememorywindow, data retention, andreaddisturb arerelatively insensitive toNC size anddensity, which easeprocessing restrictions andaid manufacturability.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::0e095e34378d93dcbd1b969a7a099edf https://doi.org/10.1109/drc.2005.1553044 Zobrazit plný text záznamu