Ultraviolet Phototransistors on AlGaN/GaN Heterostructures

Autor:	Ren Chunjiang, Li Zhonghui, Jiao Gang, Chen Tang-Sheng, Jiang Wen-Hai, Chen Chen, Dong Xun
Rok vydání:	2007
Předmět:	Electron mobility Materials science business.industry Transconductance Transistor General Physics and Astronomy Photodetector Heterojunction High-electron-mobility transistor Cutoff frequency law.invention Responsivity Optics law Optoelectronics business
Zdroj:	Chinese Physics Letters. 24:2707-2709
ISSN:	1741-3540 0256-307X
DOI:	10.1088/0256-307x/24/9/068
Popis:	We report on the fabrication and characterization of phototransistors based on AlGaN/GaN heterostructure grown over 6H-SiC substrates. The device has two functions: as a high electron mobility transistor (HEMT) and an ultraviolet photodetector at the same time. As an HEMT, its maximum transconductance is 170 mS/mm, while the minimum cutoff frequency fT and the maximum oscillation frequency fm are 19 and 35 GHz, respectively. As a photodetector, the device is visible blind, with an ultraviolet/green contrast of three orders of magnitude, and a responsivity as high as 1700 A/W at the wavelength of 362 nm.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::0e04d8b12a664e041a1804c1e63b5ebd https://doi.org/10.1088/0256-307x/24/9/068 Zobrazit plný text záznamu