Oxidation Kinetics of Nitrogen Doped TiO2-δ Thin Films: Analysis on the Basis of Oxygen Activity Dependence of the Chemical Diffusion Coefficient
| Autor: | Jian Min Shi, M. Sinder, Klaus-Dieter Becker |
|---|---|
| Rok vydání: | 2018 |
| Předmět: |
Radiation
Materials science Basis (linear algebra) Diffusion Kinetics Analytical chemistry chemistry.chemical_element Nitrogen doped 02 engineering and technology 010402 general chemistry 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Oxygen 0104 chemical sciences chemistry General Materials Science Thin film 0210 nano-technology |
| Zdroj: | Defect and Diffusion Forum. 383:147-152 |
| ISSN: | 1662-9507 |
| DOI: | 10.4028/www.scientific.net/ddf.383.147 |
| Popis: | The model explaining the occurrence of the electron concentration step front during oxidation of nitrogen-doped TiO2-δ thin films is presented. This model is based on ambipolar chemical diffusion coefficient analysis, for which immobile and uniformly distributed nitrogen component is assumed. The diffusion species and oxygen activity (pressure) profiles are obtained by numerical and approximate analytical simulation of the chemical diffusion. The profiles indicate the presence of two separate singularities: the electron concentration step front, and the electron-hole recombination reaction front. The electron concentration step front relates to the singularity of the ambipolar diffusion of three types of charged species with essentially different diffusion coefficients. |
| Databáze: | OpenAIRE |
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