Negative ions for heavy ion fusion and semiconductor manufacturing applications

Autor:	S. K. Hahto, V. Benveniste, K. Saadatmand, S.T. Hahto, L. R. Grisham, Ka-Ngo Leung, J.W. Kwan
Rok vydání:	2004
Předmět:	Materials science Ion beam business.industry RF power amplifier Ion current Ion source Ion Optoelectronics Radio frequency Atomic physics business Instrumentation Current density Voltage
Zdroj:	Review of Scientific Instruments. 75:1799-1802
ISSN:	1089-7623 0034-6748
DOI:	10.1063/1.1699455
Popis:	Radio frequency driven multicusp source was set up to run chlorine plasma and the source performance was compared between positive and negative chlorine ion production. A maximum Cl− current density of 45 mA/cm2 was achieved at 2.2 kW of rf power with electron to negative ion ratio of 7 and positive to negative ion ratio of 1.3. 99.8% of the total negative chlorine beam was atomic Cl−. To produce negative boron ions for semiconductor manufacturing applications, a noncesiated, sputtering-type surface production ion source was constructed. An external rf antenna geometry and large LaB6 converter were implemented in the source design. Maximum B2− ion current density of 1 mA/cm2 was achieved at 800 W of rf power and −600 V converter voltage. Total B2− ion current was 1.8 mA.
Databáze:	OpenAIRE
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