Electrical Characterization of Large Area 800 V Enhancement-Mode SiC VJFETs for High Temperature Applications

Autor:	Volodymyr Bondarenko, David C. Sheridan, Robin L. Kelley, Andrew Ritenour
Rok vydání:	2009
Předmět:	Materials science Mechanics of Materials business.industry Saturation current Blocking (radio) Mechanical Engineering Optoelectronics General Materials Science Normally off Condensed Matter Physics business Threshold voltage
Zdroj:	Materials Science Forum. :715-718
ISSN:	1662-9752
DOI:	10.4028/www.scientific.net/msf.615-617.715
Popis:	Prototype 800 V, 47 A enhancement-mode SiC VJFETs have been developed for high temperature operation (250 °C). With an active area of 23 mm2 and target threshold voltage of +1.25 V, these devices exhibited a 28 m room temperature on-resistance and excellent blocking characteristics at elevated temperature. With improved device packaging, on-resistance and saturation current values of 15 m and 100 A, respectively, are achievable.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::0dd032d57e2f724021f05ce16f437cd0 https://doi.org/10.4028/www.scientific.net/msf.615-617.715 Zobrazit plný text záznamu