Chemical Vapor Deposition of Anti-Reflective Layer Film for Excimer Laser Lithography

Autor:	Junichi Sato, Tetsuo Gocho, Masakazu Muroyama, Tohru Ogawa
Rok vydání:	1994
Předmět:	Materials science Excimer laser medicine.medical_treatment General Engineering Analytical chemistry General Physics and Astronomy Chemical vapor deposition Photoresist Excimer Laser law.invention law Plasma-enhanced chemical vapor deposition medicine Lithography Layer (electronics)
Zdroj:	Japanese Journal of Applied Physics. 33:486
ISSN:	1347-4065 0021-4922
DOI:	10.1143/jjap.33.486
Popis:	We report a new anti-reflective layer (ARL) film for KrF excimer lasers, which makes excimer laser lithography applicable to mass production of devices with a design rule tighter than 0.35 µm. The ARL film, which is composed of SiO x N y :H, was deposited with a higher SiH4/N2O ratio than in conventional PECVD (Plasma Enhanced Chemical Vapor Deposition) conditions. The SiO x N y :H films, with optimal refractive indices, were easily deposited by varying the SiH4/N2O ratio as a PECVD parameter. Using the SiO x N y :H film to fabricate a 16MSRAM gate structure, variations in photoresist absorption were significantly reduced.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::0dca47131963089e696527ed85cb7e5f https://doi.org/10.1143/jjap.33.486 Zobrazit plný text záznamu