Micro-Raman Mapping of the Strain Field in GaAsN/GaAsN:H Planar Heterostructures: A Brief Review and Recent Evolution
| Autor: | M. Geddo, E. Giulotto |
|---|---|
| Rok vydání: | 2019 |
| Předmět: |
Materials science
Field (physics) Phonon 02 engineering and technology 01 natural sciences law.invention Condensed Matter::Materials Science symbols.namesake Planar law 0103 physical sciences General Materials Science Instrumentation 010302 applied physics Fluid Flow and Transfer Processes Condensed matter physics Process Chemistry and Technology Relaxation (NMR) General Engineering Heterojunction Condensed Matter::Mesoscopic Systems and Quantum Hall Effect 021001 nanoscience & nanotechnology Laser Polarization (waves) Computer Science Applications symbols 0210 nano-technology Raman scattering |
| Zdroj: | Applied Sciences. 9:4864 |
| ISSN: | 2076-3417 |
| DOI: | 10.3390/app9224864 |
| Popis: | Raman scattering is an effective tool for the investigation of the strain state of crystalline solids. In this brief review, we show how the analysis of the GaAs-like longitudinal optical phonon frequency allowed to map the strain behavior across interfaces in planar heterostructures consisting of GaAsN wires embedded in GaAsN:H matrices. Moreover, we recently showed how the evolution of the longitudinal optical frequency with increasing H dose strongly depends on polarization geometry. In a specific geometry, we observed a relaxation of the GaAs selection rules. We also present new results which demonstrate how laser irradiation intensity–even at low levels–may affect the line shape of the GaAs-like spectral features in GaAsN hydrogenated materials. |
| Databáze: | OpenAIRE |
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