MBE grown GaN/AlGaN lateral Schottky barrier diodes for high frequency applications
| Autor: | Wojciech Knap, Czeslaw Skierbiszewski, I. Yahniuk, Grzegorz Muziol, Marcin Siekacz, K. Szkudlarek, Sergey L. Rumyantsev, Sergey Yatsunenko, Grzegorz Cywiński, P. Kruszewski |
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| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Materials science business.industry Process Chemistry and Technology Schottky barrier Direct current Wide-bandgap semiconductor Schottky diode Heterojunction 02 engineering and technology 021001 nanoscience & nanotechnology Metal–semiconductor junction 01 natural sciences Surfaces Coatings and Films Electronic Optical and Magnetic Materials 0103 physical sciences Materials Chemistry Optoelectronics Electrical and Electronic Engineering 0210 nano-technology business Instrumentation Molecular beam epitaxy Diode |
| Zdroj: | Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 34:02L118 |
| ISSN: | 2166-2754 2166-2746 |
| DOI: | 10.1116/1.4944320 |
| Popis: | The authors report the results of studies of lateral and vertical Schottky barrier diodes (SBD) based on molecular beam epitaxy (MBE) grown GaN/AlGaN heterostructures with two dimensional electron gas (2DEG) present at the heterostructure interface. The epilayers were grown by plasma assisted molecular beam epitaxy under metal-rich conditions on commercially available freestanding (0001) GaN substrates. Here, the authors present detailed results for two structures with electron sheet density (N2DEG) of 4.6 × 1012 and 1 × 1013 cm−2 and room temperature mobility of μ2DEG = 1925 cm2/V s and μ2DEG = 1760 cm2/V s, respectively. The processing of lateral and vertical Schottky barrier diodes was performed by laser writer using shallow mesas and Ni/Au metallization for Schottky barriers. The direct current electrical tests performed on lateral and vertical Schottky barrier diodes yielded a turn-on voltage of 0.6 and 1 V, respectively. For both cases, the reverse current registered in the experiment was very low a... |
| Databáze: | OpenAIRE |
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