Cryogenic low noise amplifiers in an InP HEMT MMIC process

Autor:	Jan Grahn, G. Alestig, Arsalan Pourkabirian, J. Halonen, Herbert Zirath, J.P. Starski, Joel Schleeh, Bengt Nilsson, Per-Åke Nilsson, Niklas Wadefalk
Rok vydání:	2015
Předmět:	Noise temperature Materials science business.industry Amplifier High-electron-mobility transistor Noise (electronics) chemistry.chemical_compound chemistry Indium phosphide Optoelectronics Wafer Ka band business Monolithic microwave integrated circuit
Zdroj:	2015 Asia-Pacific Microwave Conference (APMC).
Popis:	An indium phosphide HEMT MMIC process was developed for ultralow noise amplifiers (LNAs) at cryogenic temperatures. The process was run on 4" wafers and utilized 130 nm gate-length HEMTs. Several wide band LNAs were made in a frequency range between 1 GHz and 100 GHz. A Ka band LNA had a minimum noise temperature of 10 K and a gain of 35 dB.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::0dbcea7ef7d80c46622efaf88f6a1e9c https://doi.org/10.1109/apmc.2015.7411746 Zobrazit plný text záznamu