Use of DBARCs Beyond Implant
Autor: | Alice Guerrero, Joyce Lowes, Carlton Washburn |
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Rok vydání: | 2011 |
Předmět: | |
Zdroj: | ECS Transactions. 34:249-255 |
ISSN: | 1938-6737 1938-5862 |
Popis: | Almost a decade ago, the integrated circuit (IC) industry realized that traditional implant layers required new technology to achieve the specifications of the shrinking design rules and increased topography effects. In response, developer-soluble bottom anti-reflective coatings (DBARCs) were introduced as a solution. DBARCs offered the resolution and critical dimension (CD) control needed for the increasingly critical implant layers. In this paper the benefits DBARCs can bring to other lithographic processes are reviewed. Back-end-of-line (BEOL) dual damascene processes are surveyed. Front-end-of-line (FEOL) processes are examined, including high-k metal gate (HKMG), double patterning, and spacer. All processes are defined, and the value that a DBARC brings to each process is examined, along with potential challenges. |
Databáze: | OpenAIRE |
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