Improvement of Leakage Current Characteristics by Plasma Treatment in Bi[sub 2]Mg[sub 2∕3]Nb[sub 4∕3]O[sub 12] Dielectric Thin Films
| Autor: | Jong-Hyun Park, MK Jeon, Cheng-Ji Xian, Jung Won Lee, Soon-Gil Yoon, Seong Ihl Woo, In Hyung Lee, Seung Eun Lee, Byoung Ikg Song, Kyung-Chan Ahn, Eui-Tae Kim, Yul Kyo Chung |
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| Rok vydání: | 2007 |
| Předmět: |
Materials science
General Chemical Engineering Analytical chemistry Plasma Dielectric Capacitance law.invention Pulsed laser deposition Capacitor law Electrochemistry Dissipation factor Breakdown voltage General Materials Science Electrical and Electronic Engineering Physical and Theoretical Chemistry Thin film |
| Zdroj: | Electrochemical and Solid-State Letters. 10:G18 |
| ISSN: | 1099-0062 |
| DOI: | 10.1149/1.2458413 |
| Popis: | Bismuth magnesium niobate (BMN) thin films deposited on Cu/Ti/Si substrates at 100°C by pulsed laser deposition were investigated for the effect of plasma treatment on dielectric and leakage current characteristics. The dielectric constant and dissipation factor of 60 nm thick films slightly decrease with increasing oxygen content in atmosphere of plasma treatment. The leakage current densities were improved with increasing oxygen content. The capacitance density and breakdown voltage of the films treated with N 2 :O 2 = 100:100 seem (standard cm 3 /min) were approximately 520 nF/cm 2 and 3 V, respectively. On the other hand, 100 nm thick BMN films treated by plasma at N 2 :O 2 = 100:100 sccm exhibit a leakage current density of approximately 6 X 10 -7 A/cm 2 at 10 V and a breakdown voltage above 10 V which is possible for embedded capacitor applications. |
| Databáze: | OpenAIRE |
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