Modification of the Photoelectric Properties of Undoped Hydrogenated Amorphous Silicon Films under Preliminary Illumination at Elevated Temperatures

Autor:	N. N. Ormont, I. A. Kurova
Rok vydání:	2020
Předmět:	010302 applied physics Amorphous silicon Materials science Photoconductivity Analytical chemistry 02 engineering and technology Electron Photoelectric effect 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Active oxygen chemistry.chemical_compound chemistry 0103 physical sciences Density of states 0210 nano-technology Intensity (heat transfer) Recombination
Zdroj:	Semiconductors. 54:437-440
ISSN:	1090-6479 1063-7826
DOI:	10.1134/s1063782620040119
Popis:	The effect of preliminary weak illumination at elevated temperatures on the photoelectric properties of undoped α-Si:H films is investigated. It is found that the dark conductivity and photoconductivity of films increases with the preliminary-illumination intensity, and the parameter γ determining the dependence of the photoconductivity on the illumination intensity decreases due to an increasing fraction of the bimolecular recombination of electrons at energy levels of the tail of the density of states of the conduction band. It is assumed that this effect may be induced by the presence of an uncontrolled oxygen impurity and an increase in the concentration of electrically active oxygen as a result of preliminary illumination of the films at elevated temperatures.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::0da4b19f582aa9eddfbccced86c88e7e https://doi.org/10.1134/s1063782620040119 Zobrazit plný text záznamu Plný text ve formátu PDF Plný text ve formátu HTML
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