Chip to wafer hermetic bonding with flux-less reflow oven
Autor: | Christoph Oetzel, Sunil Wickramanayaka, Leong Ching Wai, Vivek Chidambaram Nachiappan |
---|---|
Rok vydání: | 2016 |
Předmět: |
Materials science
Silicon Reflow oven 020208 electrical & electronic engineering Metallurgy Oxide chemistry.chemical_element 02 engineering and technology Substrate (electronics) 021001 nanoscience & nanotechnology chemistry.chemical_compound chemistry Soldering 0202 electrical engineering electronic engineering information engineering Wafer Helium mass spectrometer 0210 nano-technology Helium |
Zdroj: | 2016 IEEE 18th Electronics Packaging Technology Conference (EPTC). |
DOI: | 10.1109/eptc.2016.7861438 |
Popis: | In this study, it is shown that temporary tacking (without flux and temporary tack materials) is feasible to temporary tack Cu/SnAg or SnAg sealing ring onto Cu sealing ring at the bottom wafer. The temporary tacked samples were reflowed in a formic acid environment and this allowed the removal of the native oxide of solder. The removal of oxide provides a good solder joints formation during reflow [4]. Vacuum reflow with formic acid and load of 20g per unit showed good sealing results. Helium leak test for chip on silicon substrate was carried out. The results indicated the leak rate at the level of ≤ 5×10−8 atm cc/s Helium can be achieved. Chip on wafer (CoW) bonding with hermetic sealing was demonstrated on 8″ wafer with cavity. |
Databáze: | OpenAIRE |
Externí odkaz: |