Nonlinear absorption and refraction in strained InGaAs/InP multiple quantum wells for all-optical switching
| Autor: | R. Calvani, R. Caponi, D. Campi, F. Genova, P.J. Bradley |
|---|---|
| Rok vydání: | 1992 |
| Předmět: |
Quenching
Absorption spectroscopy Condensed Matter::Other Chemistry business.industry Exciton Physics::Optics Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Condensed Matter Physics Molecular physics Optical switch Refraction Electronic Optical and Magnetic Materials Condensed Matter::Materials Science Wavelength Optics Materials Chemistry Electrical and Electronic Engineering business Refractive index Quantum well |
| Zdroj: | Semiconductor Science and Technology. 7:552-555 |
| ISSN: | 1361-6641 0268-1242 |
| DOI: | 10.1088/0268-1242/7/4/019 |
| Popis: | Absorption spectra of strained InGaAs/InP quantum wells exhibit a single, unusually large exciton feature. 60% quenching is obtained for 4.3 mW Nd:YAG effective pump power at a wavelength of 1.064 mu m. A simple two-level formula fits well the behaviour at the exciton peak, and absorption spectra are reasonably approximated by a standard two-dimensional exciton model. Saturation intensities calculated with these techniques range around 200 W cm-2. Finally the Kramers-Kronig relations are used to calculate the associated refractive index change. |
| Databáze: | OpenAIRE |
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