Some Properties of Group-III Nitride Thin Films Directly Grown on Non-Single-Crystalline Substrates by Using a Molecular Beam Epitaxy Apparatus

Autor:	Yoshifumi Murakami, Tatsuya Matsunaga, Nur Ain, Shota Ishizaki, Mohamad Idham, Yuichi Sato
Rok vydání:	2015
Předmět:	Materials science Photoluminescence business.industry Doping chemistry.chemical_element Gallium nitride Germanium Nitride eye diseases chemistry.chemical_compound Carbon film chemistry Optoelectronics sense organs Thin film business Molecular beam epitaxy
Zdroj:	Journal of Modern Physics. :1289-1297
ISSN:	2153-120X 2153-1196
Popis:	Gallium nitride (GaN) and indium-gallium nitride (InxGa1-xN) thin films were directly grown on several non-single-crystalline substrates such as quartz glass and amorphous-carbon-coated graphite. The films were grown by using a molecular beam epitaxy apparatus having single or dual nitrogen radio-frequency plasma cells, and in addition, germanium (Ge) or magnesium (Mg) doping to the films was also attempted. Crystallinity, photoluminescence (PL) property, and electrical property of the obtained films were investigated. Highly c-axis oriented GaN and InxGa1-xN thin films were obtained on the non-single-crystalline substrates. Near-band-edge emissions were observed in their PL spectra and the intensities were strongly enhanced by Ge doping. Ge doping was also effective on reducing resistivity of the GaN thin films grown on the non-single-crystalline substrates. Electrochemical capacitance-voltage measurements were carried out on the Mg-doped GaN thin films; and p-type conduction in the films was confirmed.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::0d9a11ffc5a0e1f4415d53f5d2f5f88c https://doi.org/10.4236/jmp.2015.69134 Zobrazit plný text záznamu