Impact of remote oxygen scavenging on the interfacial characteristics of atomic layer deposited LaAlO3
| Autor: | Lu Zhao, Xing Wang, Yongte Wang, Hongxia Liu |
|---|---|
| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
Materials science Mechanical Engineering Dangling bond chemistry.chemical_element Equivalent oxide thickness 02 engineering and technology Dielectric 021001 nanoscience & nanotechnology Condensed Matter Physics Microstructure 01 natural sciences Atomic layer deposition Chemical engineering chemistry Mechanics of Materials 0103 physical sciences General Materials Science 0210 nano-technology High-resolution transmission electron microscopy Tin Leakage (electronics) |
| Zdroj: | Materials Science in Semiconductor Processing. 90:50-53 |
| ISSN: | 1369-8001 |
| DOI: | 10.1016/j.mssp.2018.10.001 |
| Popis: | In this paper, the influence of a remote interfacial layer (IL) scavenging method on the interfacial characteristics of LaAlO3 grown by atomic layer deposition (ALD) on Si substrates has been studied. After the fabrication of Pt/LaAlO3/Si and Pt/Ti/TiN/LaAlO3/Si metal-insulator-semiconductor (MIS) capacitors, the microstructures and electrical properties of these MIS capacitors have been comparatively investigated. High resolution transmission electron microscopy (HRTEM) analysis shows that the thickness of IL between LaAlO3 films and Si substrates is reduced by remote IL scavenging technique, contributing to lower equivalent oxide thickness (EOT) and to higher dielectric constant values. However, larger amount of oxygen vacancies and dangling bonds are induced in the MIS structure with IL scavenging reaction, resulting in a slight degradation of the gate leakage current-voltage and the breakdown characteristics. |
| Databáze: | OpenAIRE |
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