Taper Angle of Silicon Nitride Thin Film Control by Laser Direct Pattern for Transistors Fabrication

Autor:	Gwo Mei Wu, Chao Nan Chen, How Wen Chien, Jung Jie Huang
Rok vydání:	2013
Předmět:	Materials science business.industry Photoablation General Medicine Substrate (electronics) Laser law.invention chemistry.chemical_compound Optics Silicon nitride chemistry Thin-film transistor law Plasma-enhanced chemical vapor deposition Thin film business Layer (electronics)
Zdroj:	Applied Mechanics and Materials. :225-229
ISSN:	1662-7482
DOI:	10.4028/www.scientific.net/amm.284-287.225
Popis:	Silicon nitride (SiNx), an important material used as a dielectric layer and passivation layer in thin film transistor liquid crystal display (TFT LCD) was patterned by a non-lithographic process. SiNx was deposited by plasma enhanced chemical vapor deposition (PECVD) on glass substrate. Laser photoablation can effectively pattern 5 µm diameter with 200 nm depth hole in SiNx thin films with laser photoablation. The threshold remove fluence is 1350 mJ/cm2 with 1 laser irradiation shot. The contact-hole taper angle as a function of the laser irradiation shot number. The taper angle increased with increasing the laser irradiation shot number. The contact-hole taper angle etched profile was successfully controlled by vary the laser irradiation shot number.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::0d9609ebbbbfa617167e60b68cfec4ba https://doi.org/10.4028/www.scientific.net/amm.284-287.225 Zobrazit plný text záznamu