| Autor: |
H.C. Yen, D.C. Streit, Richard Lai, Michael E. Barsky, R. Grunbacher, Y.C. Chen, D.L. Ingram, T.R. Block |
| Rok vydání: |
1998 |
| Předmět: |
|
| Zdroj: |
IEEE Microwave and Guided Wave Letters. 8:399-401 |
| ISSN: |
1051-8207 |
| Popis: |
We have established a state-of-the-art InGaAs-InAlAs-InP HEMT MMIC fabrication process for millimeter-wave high-power applications. A two-stage monolithic microwave integrated circuit (MMIC) power amplifier with 0.15-/spl mu/m gate length and 1.28-mm output periphery fabricated using this process has demonstrated an output power of 427 mW with 19% power-added efficiency at 95 GHz. To our knowledge, this is the highest output power ever reported at this frequency for any solid-state MMIC amplifier. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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