Frequency tuning hysteresis of a dual‐resonance divide‐by‐three cross‐coupled injection‐locked frequency divider
| Autor: | Ching-Wen Hsue, Shih-Jie Jian, Sheng-Lyang Jang |
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| Rok vydání: | 2018 |
| Předmět: |
Materials science
business.industry Capacitive sensing 020208 electrical & electronic engineering Resonance 020206 networking & telecommunications 02 engineering and technology Power (physics) Frequency divider Resonator Hysteresis CMOS 0202 electrical engineering electronic engineering information engineering Optoelectronics Electrical and Electronic Engineering business Voltage |
| Zdroj: | IET Microwaves, Antennas & Propagation. 12:1302-1309 |
| ISSN: | 1751-8733 |
| DOI: | 10.1049/iet-map.2017.0592 |
| Popis: | This paper studies the frequency tuning effect on the locking range property of a dual-resonance 3:1 injection-locked frequency divider (ILFD) fabricated in a foundry 0.18 μm BiCMOS process. The ILFD architecture is based on a capacitive cross-coupled oscillator in conjunction with a resistor-degraded dual-resonance resonator for the locking range improvement. At a power consumption of 5.26 mW and at injection power of P inj = 0 dBm the locking range from the measurement is from 6.2 to 12.6 GHz (68.09%). The frequency tuning range of the free-running ILFD shows a frequency tuning hysteresis effect; at low input power level the locking range shows bipolar locking ranges and at high injection power the locking range is independent of the measured voltage tuning direction. |
| Databáze: | OpenAIRE |
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