Gate Capacitance and Off-State Characteristics of E-Mode p-GaN Gate AlGaN/GaN High-Electron-Mobility Transistors After Gate Stress Bias
| Autor: | Yu Chen Lai, Ming Yan Tsai, Yi Nan Zhong, Yue Ming Hsin |
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| Rok vydání: | 2021 |
| Předmět: |
010302 applied physics
Materials science Solid-state physics business.industry Transistor 02 engineering and technology High-electron-mobility transistor 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Capacitance Electronic Optical and Magnetic Materials law.invention Threshold voltage Stress (mechanics) law 0103 physical sciences Materials Chemistry Optoelectronics Electrical and Electronic Engineering 0210 nano-technology High electron business Gate capacitance |
| Zdroj: | Journal of Electronic Materials. 50:1162-1166 |
| ISSN: | 1543-186X 0361-5235 |
| DOI: | 10.1007/s11664-020-08691-w |
| Popis: | This study investigated the gate capacitance and off-state characteristics of 650-V enhancement-mode p-GaN gate AlGaN/GaN high-electron-mobility transistors after various degrees of gate stress bias. A significant change was observed in the on-state capacitance when the gate stress bias was greater than 6 V. The corresponding threshold voltage exhibited a positive shift at low gate stress and a negative shift when the gate stress was greater than 6 V, which agreed with the shift observation from the I–V measurement. Moreover, the off-state leakage current increased significantly after the gate stress exceeded 6 V during the off-state characterization although the devices could be biased up to 1000 V without breakdown. The increase in the off-state leakage current would lead to higher power loss. |
| Databáze: | OpenAIRE |
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