OH-Si complex in hydrogenated n-typeβ-Ga2O3:Si

Autor:	Fan Ren, W. Beall Fowler, Michael Stavola, Andrew Venzie, Stephen J. Pearton, Amanda Portoff, Chaker Fares
Rok vydání:	2021
Předmět:	Secondary ion mass spectrometry Materials science Physics and Astronomy (miscellaneous) Passivation Dopant Hall effect Atom Transition dipole moment Physical chemistry Infrared spectroscopy Conductivity
Zdroj:	Applied Physics Letters. 119:062109
ISSN:	1077-3118 0003-6951
DOI:	10.1063/5.0059769
Popis:	Si is an n-type dopant in Ga2O3 that can be intentionally or unintentionally introduced. The results of Secondary Ion Mass Spectrometry, Hall effect, and infrared absorption experiments show that the hydrogen plasma exposure of Si-doped Ga2O3 leads to the formation of complexes containing Si and H and the passivation of n-type conductivity. The Si-H (D) complex gives rise to an O-H (D) vibrational line at 3477.6 (2577.8) cm−1 and is shown to contain a single H (or D) atom. The direction of the transition moment of this defect has been investigated to provide structure-sensitive information. Theory suggests possible structures for an OH-Si complex that is consistent with its observed vibrational properties.
Databáze:	OpenAIRE
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