Low‐defect‐density germanium on silicon obtained by a novel growth phenomenon

Autor:	D. P. Malta, J. B. Posthill, T. P. Humphreys, Robert J. Markunas
Rok vydání:	1992
Předmět:	Materials science Physics and Astronomy (miscellaneous) Silicon business.industry chemistry.chemical_element Mineralogy Germanium Epitaxy Crystallographic defect chemistry Etch pit density Optoelectronics Dislocation Thin film business Molecular beam epitaxy
Zdroj:	Applied Physics Letters. 60:844-846
ISSN:	1077-3118 0003-6951
Popis:	Heteroepitaxial Ge on Si has been grown using molecular beam epitaxy at a Si substrate temperature of 900 °C. Electron microscopy results reveal a highly faceted interface, indicating localized Ge melting and subsequent local alloying with Si. Furthermore, this phenomenon is associated with extensive threading dislocation confinement near the Ge/Si interface. Etch pit density measurements obtained on Ge heteroepitaxial films that have undergone interfacial melting are as low as 105 cm−2.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::0d833db9fc995f7cf4bdd0c75c03aa4c https://doi.org/10.1063/1.106532 Zobrazit plný text záznamu