Gallium Nitride and Silicon Transistors on 300 mm Silicon Wafers Enabled by 3-D Monolithic Heterogeneous Integration
| Autor: | Han Wui Then, Pratik Koirala, Marko Radosavljevic, Fischer Paul B, Tushar Talukdar, B. Krist, Kimin Jun, Nicole K. Thomas |
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| Rok vydání: | 2020 |
| Předmět: |
010302 applied physics
Materials science Analytical chemistry Schottky diode Gallium nitride High-electron-mobility transistor Substrate (electronics) Epitaxy 01 natural sciences Electronic Optical and Magnetic Materials PMOS logic chemistry.chemical_compound chemistry 0103 physical sciences MOSFET Electrical and Electronic Engineering NMOS logic |
| Zdroj: | IEEE Transactions on Electron Devices. 67:5306-5314 |
| ISSN: | 1557-9646 0018-9383 |
| Popis: | We demonstrate industry’s first 300 mm GaN transistor technology and 3-D monolithic heterogeneous integration with Si transistors, enabled by 300 mm GaN metal–organic chemical vapor deposition (MOCVD) epitaxy and 300 mm 3-D layer transfer. The 300 mm GaN technology is a high- ${k}$ dielectric enhancement-mode GaN nMOS transistor technology on Si(111) substrate. It is capable of excellent characteristics and figure-of-merits (FOM) for realizing energy-efficient, compact power-delivery and RF front-end components such as power-amplifiers, low-noise amplifiers, and RF-switches. Our GaN nMOS transistors show e-mode operation with: 1) high ${I}_{\text {D,max}} =1.5$ mA/ $\mu \text{m}$ ; 2) low ${R}_{ \mathrm{\scriptscriptstyle ON}}$ of $610\,\,\Omega -\mu \text{m}$ ( ${L}_{\text {G}} =50$ nm); 3) low ${I}_{ \mathrm{\scriptscriptstyle OFF}}$ of 100 pA/ $\mu \text{m}$ ( ${L}_{\text {G}} \,\,=180$ nm), which are significant improvements over GaN HEMT; 4) excellent RF performance: ${f}_{\text {T}} =190$ GHz, ${f}_{\text {MAX}} =300$ GHz, power-added efficiency (PAE) = 56% ( ${L}_{\text {G}} \,\,=50$ nm) at mmwave frequency 28 GHz, and PAE = 77% at 5 GHz ( ${L}_{\text {G}} =180$ nm), significantly better than industry-standard GaAs and Si RF transistors; 5) good RF-switch FOM, ${R}_{ \mathrm{\scriptscriptstyle ON}}{C}_{ \mathrm{\scriptscriptstyle OFF}} =110$ fs; and 6) low noise figure, NF $_{\text {min}} \,\,=1.36$ dB ( ${f} =28$ GHz) and 0.4 dB ( ${f} =5$ GHz), all at SoC-compatible voltages. We further demonstrate GaN transistor innovations all integrated on 300 mm Si(111) wafer, including depletion-mode GaN nMOS transistor with high ${I}_{\text {D}} =1.8$ mA/ $\mu \text{m}$ ; GaN Schottky gate transistor producing high saturated power of 20 dBm ( $80\mu \text{m}$ width) with peak PAE = 57% at 28 GHz; low leakage compact cascode and multigate GaN transistors; and GaN Schottky diodes with ultralow ${C}_{ \mathrm{\scriptscriptstyle OFF}}$ for electrostatic discharge (ESD) protection. The layer-transferred Si transistors, monolithically stacked on top of the GaN transistors by 300 mm 3-D layer transfer, show high drive current performance: 1.0 mA/ $\mu \text{m}$ (Si nMOS) and 0.5 mA/ $\mu \text{m}$ (Si pMOS). Such a monolithic 3-D Monolithic integration of GaN and Si transistors enables full integration of energy-efficient, truly compact power delivery and RF solutions with CMOS digital signal processing, logic computation and control, memory, and analog circuitries. |
| Databáze: | OpenAIRE |
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