| Autor: |
Anumita Sengupta, Shreya Moonka, Santashraya Prasad, Anushruti Priya, Aminul Islam, Akshat Chitransh |
| Rok vydání: |
2017 |
| Předmět: |
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| Zdroj: |
2017 Devices for Integrated Circuit (DevIC). |
| DOI: |
10.1109/devic.2017.8073970 |
| Popis: |
A structure of AlGaN/AlN/GaN High Electron Mobility Transistor with surface passivation is proposed in this paper. AlN layer in the proposed structure acts as spacer layer in order to improve the Two Dimensional electron gas mobility formed at the AlN/GaN junction. Output characteristics (Id-Vds), transfer characteristics (Id-Vgs), subthreshold slope and unity gain cut-off frequency (f T ) of the device are observed. The proposed device shows negligible leakage current in OFF state at V ds = 1 V. The device achieves maximum drain current of about 450 mA and exhibits a very steep and nearly ideal subthreshold slope of 63.3 mV/dec and hence can be used where very high speed transition between ON and OFF states is required. The simulated device exhibits unity current gain cutoff frequency (f T ) of 1 GHz. All the simulations are performed using Silvaco ATLASTM. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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