Leakage Control in 0.4-nm EOT Ru/SrTiO x /Ru Metal-Insulator-Metal Capacitors: Process Implications
| Autor: | Wan Chih Wang, Mihaela Popovici, N. Jourdan, Augusto Redolfi, Christian Caillat, Johan Swerts, Christina Olk, Valeri Afanas'ev, Marc Aoulaiche, Sven Van Elshocht, Ben Kaczer, Sergiu Clima, H. Hody, Malgorzata Jurczak |
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| Rok vydání: | 2014 |
| Předmět: |
Electrode material
Materials science business.industry Analytical chemistry Electrical engineering Electronic Optical and Magnetic Materials law.invention Atomic layer deposition Capacitor Film capacitor law Electrode Metal insulator metal capacitor Electrical and Electronic Engineering business Leakage (electronics) |
| Zdroj: | IEEE Electron Device Letters. 35:753-755 |
| ISSN: | 1558-0563 0741-3106 |
| DOI: | 10.1109/led.2014.2322632 |
| Popis: | Leakage currents as low as \(10^{\mathrm {\mathbf {-7}}}\) A/cm \(^{\mathrm {\mathbf {2}}}\) at both 1 V and −1 V top electrode bias in the sub-0.4-nm equivalent SiO 2 thickness range are demonstrated in Ru/SrTiO x /Ru metal-insulator–metal capacitors in which the 8.5-nm SrTiO x layer is deposited by atomic layer deposition. The top electrode material and deposition technique as well as the postdeposition anneal are crucial parameters to control the leakage, not only at negative, but also at positive top electrode bias. |
| Databáze: | OpenAIRE |
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