Leakage Control in 0.4-nm EOT Ru/SrTiO x /Ru Metal-Insulator-Metal Capacitors: Process Implications

Autor: Wan Chih Wang, Mihaela Popovici, N. Jourdan, Augusto Redolfi, Christian Caillat, Johan Swerts, Christina Olk, Valeri Afanas'ev, Marc Aoulaiche, Sven Van Elshocht, Ben Kaczer, Sergiu Clima, H. Hody, Malgorzata Jurczak
Rok vydání: 2014
Předmět:
Zdroj: IEEE Electron Device Letters. 35:753-755
ISSN: 1558-0563
0741-3106
Popis: Leakage currents as low as \(10^{\mathrm {\mathbf {-7}}}\) A/cm \(^{\mathrm {\mathbf {2}}}\) at both 1 V and −1 V top electrode bias in the sub-0.4-nm equivalent SiO 2 thickness range are demonstrated in Ru/SrTiO x /Ru metal-insulator–metal capacitors in which the 8.5-nm SrTiO x layer is deposited by atomic layer deposition. The top electrode material and deposition technique as well as the postdeposition anneal are crucial parameters to control the leakage, not only at negative, but also at positive top electrode bias.
Databáze: OpenAIRE