Autor: |
C.W. Pitt, D.E. Hole, Nikhil Sharma, C.E. Chryssou, Anthony J. Kenyon, Colin J. Humphreys, Tsutomu Shimizu-Iwayama |
Rok vydání: |
2001 |
Předmět: |
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Zdroj: |
Materials Science and Engineering: B. 81:19-22 |
ISSN: |
0921-5107 |
Popis: |
We report recent results showing broad-band excitation of erbium ions implanted into thin films of silica containing silicon nanocrystals. Evidence for the existence of nanocrystals is presented in the form of HR-TEM images of crystalline regions of the thin films. Indirect excitation of the rare-earth ions is mediated by the nanocrystals, which are either grown in during plasma enhanced CVD of the films, or are formed by implantation of thermally grown SiO 2 layers with Si + ions. We demonstrate efficient flashlamp pumping of the erbium 1.535 μm PL band and discuss the device implications of this material. |
Databáze: |
OpenAIRE |
Externí odkaz: |
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