A Growth Kinetics Model for the Radical Oxidation of Silicon

Autor:	Olaf Storbeck, Wieland Pethe, Regina Hayn
Rok vydání:	2008
Předmět:	Materials science Silicon Mechanical Engineering Radical Inorganic chemistry Oxide chemistry.chemical_element Condensed Matter Physics chemistry.chemical_compound chemistry Mechanics of Materials Thermal General Materials Science Wafer Wet oxidation Beak formation Silicon oxide
Zdroj:	Materials Science Forum. :147-152
ISSN:	1662-9752
DOI:	10.4028/www.scientific.net/msf.573-574.147
Popis:	The silicon oxide growth kinetics were investigated for single wafer rapid thermal (RTP) and large batch vertical furnace radical oxidation processes under varying conditions. An oxidation model is proposed in which the oxidation rate of hydrogen–assisted radical oxidation is a combination of constant–rate low pressure wet oxidation and an oxygen radical driven process decaying with increasing oxide thickness. The model parameters for selected RTP and batch furnace oxidation processes are extracted and discussed. The implications of this model are compared to observed properties of the radical oxidation process like lattice orientation, stress independence, bird’s beak formation and thickness uniformity.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::0d6be21c200e9517c83b59179d9d6265 https://doi.org/10.4028/www.scientific.net/msf.573-574.147 Zobrazit plný text záznamu