Power MOSFET quality and robustness enhancement with a new QBD characterization performed at probe–die–wafer level

Autor:	Jean-Marie Dorkel, Jean-Michel Reynes, Emilie Pomes, Patrick Tounsi
Rok vydání:	2012
Předmět:	Materials science business.industry Mechanical Engineering Automotive industry Condensed Matter Physics Reliability engineering Charge to breakdown Mechanics of Materials Robustness (computer science) Gate oxide General Materials Science Wafer Power MOSFET business Fast measurement
Zdroj:	Materials Science and Engineering: B. 177:1362-1366
ISSN:	0921-5107
DOI:	10.1016/j.mseb.2012.03.011
Popis:	The quality of the gate oxide is a central parameter for power MOSFET devices dedicated to automotive applications. Reliability is systematically evaluated through electrical tests. The purpose of this study is to apply the QBD test directly at probe–die–wafer level and to correlate its results with reliability test conclusions. In other words, this new kind of QBD test is a monitor of power MOSFET robustness which helps identify extrinsic failures and the process steps responsible. In summary, it is an accurate and fast measurement method of identifying weakened parts and enhancing device quality.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::0d61d880ae94986475405a35344b80a9 https://doi.org/10.1016/j.mseb.2012.03.011 Zobrazit plný text záznamu Full Text from ScienceDirect