Neutron-irradiation effect on the electrical characteristics of amorphous silicon carbide and nitrogen-doped silicon carbide films prepared by PECVD technology
| Autor: | N.I. Balalykin, Angela Kleinová, L. Hrubčín, Mária Sekáčová, Alexander P. Kobzev, Pavol Boháček, Jozef Huran, Sergey B. Borzakov, Valery Shvetsov |
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| Rok vydání: | 2013 |
| Předmět: |
Amorphous silicon
Materials science Analytical chemistry Surfaces and Interfaces Chemical vapor deposition Condensed Matter Physics Rutherford backscattering spectrometry Silane Surfaces Coatings and Films Electronic Optical and Magnetic Materials Carbide Elastic recoil detection chemistry.chemical_compound chemistry Plasma-enhanced chemical vapor deposition Materials Chemistry Silicon carbide Electrical and Electronic Engineering |
| Zdroj: | physica status solidi (a). 210:2756-2761 |
| ISSN: | 1862-6300 |
| Popis: | Silicon carbide (SiC) and nitrogen-doped silicon carbide (SiC(N)) films were deposited on p-type Si(100) substrates at various deposition conditions by means of plasma-enhanced chemical vapor deposition (PECVD) technology using silane (SiH4), methane (CH4), and ammonia (NH3) gas as precursors. The concentration of elements in the films was determined by Rutherford backscattering spectrometry (RBS) and elastic recoil detection (ERD) analytical method simultaneously. Chemical composition was analyzed by Fourier transform infrared spectroscopy (FT-IR). The films contain a small amount of oxygen. IR results showed the presence of SiC, SiN, SiH, CH, CN, NH, and SiO bonds. The current–voltage (I–V) characteristics of samples before and after neutron irradiation were measured. The measured current increases after irradiation with neutrons. |
| Databáze: | OpenAIRE |
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