The structure study of thin semiconductor and dielectric layers by synchrotron radiation diffraction

Autor:	G.S Yurjev, M.A Sheromov, M.A Korchaggin, V.P Nazmov, V.I Kondratjev
Rok vydání:	2000
Předmět:	Physics Diffraction Nuclear and High Energy Physics Thin layers Condensed matter physics Anomalous scattering business.industry Physics::Optics Synchrotron radiation Dielectric Crystal structure Amorphous solid Semiconductor Optics business Instrumentation
Zdroj:	Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 448:286-289
ISSN:	0168-9002
DOI:	10.1016/s0168-9002(00)00228-x
Popis:	The structure of novel materials was studied using diffraction patterns obtained at the “Anomalous scattering” station. The substances to be examined are thin (100–9000 A) single-crystals, polycrystals and amorphous thin layers on various kinds of substrates that are supported by diffraction. Disorientation of blocks in highly ordered layers was estimated using the length of arc reflections in two-dimensional diffraction patterns recorded by Image Plate. A difference in parameters of crystal lattices of layers and bulk samples is shown.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::0d521eabf544d929d3e7e61f73086fc3 https://doi.org/10.1016/s0168-9002(00)00228-x Zobrazit plný text záznamu Full Text from ScienceDirect