MOVPE growth of AlGaN/GaN superlattices on ZnO substrates for green emitter applications

Autor:	Benjamin Klein, Nola Li, Ian T. Ferguson, Shen-Jie Wang, Andrew Melton, William E. Fenwick, Hongbo Yu
Rok vydání:	2008
Předmět:	Inorganic Chemistry Materials science business.industry Superlattice Vapor phase Materials Chemistry Optoelectronics Algan gan Metalorganic vapour phase epitaxy Condensed Matter Physics Epitaxy business Common emitter
Zdroj:	Journal of Crystal Growth. 310:4904-4907
ISSN:	0022-0248
Popis:	AlGaN/GaN superlattice structures have been deposited on (0 0 0 1) ZnO substrates by metalorganic vapor phase epitaxy. The growth conditions were first optimized on GaN templates using N 2 as carrier gas at relatively low temperature (
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::0d3d3b2b61ba667469e086fd9067bf05 https://doi.org/10.1016/j.jcrysgro.2008.07.071 Zobrazit plný text záznamu Full Text from ScienceDirect