Influence of hydrogen on local phase separation in InGaN thin layers and properties of light-emitting structures based on them

Autor:	W. V. Lundin, V. S. Sizov, Andrey E. Nikolaev, Yu. G. Musikhin, S. O. Usov, Dagmar Gerthsen, A. V. Sakharov, A. F. Tsatsul’nikov, E. E. Zavarin
Rok vydání:	2011
Předmět:	Materials science Thin layers Chemical engineering Hydrogen chemistry Analytical chemistry Deposition (phase transition) chemistry.chemical_element Heterojunction Condensed Matter Physics Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials
Zdroj:	Semiconductors. 45:271-276
ISSN:	1090-6479 1063-7826
DOI:	10.1134/s1063782611020230
Popis:	Results of studies of hydrogen addition during the growth of thin (∼2–3 nm) InGaN layers on their structural properties and properties of light-emitting structures that contain InGaN/GaN heterostructures in the active region are reported. It is shown that, with the known effect of a decrease in the average content of In, hydrogen addition leads to varying the local phase separation in the InGaN layers. Hydrogen addition during the growth of the InGaN layers initially causes suppression of the local phase separation, while hydrogen addition during interruptions of the growth after deposition of the InGaN films leads to a decrease in the size of the formed local In-enriched regions and to a certain increase in the local content of the In atoms.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::0d2a59a59cf5c4605aff5d97a8709e00 https://doi.org/10.1134/s1063782611020230 Zobrazit plný text záznamu Plný text ve formátu PDF