| Autor: |
A W Tinsley, P R C Stevens |
| Rok vydání: |
1971 |
| Předmět: |
|
| Zdroj: |
Journal of Physics C: Solid State Physics. 4:L150-L153 |
| ISSN: |
0022-3719 |
| DOI: |
10.1088/0022-3719/4/9/003 |
| Popis: |
In the analysis of electrical measurements on ion implanted layers in semi-conductors it is important to take account of the possibility of incomplete donor or acceptor ionization, and the fact that the material is likely to degenerate. Methods for computing these effects and the effect of mobility variation with depth are presented. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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